inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor 2SK1662 description drain current C i d = 3a@ t c =25 drain source voltage- : v dss =700v(min) applications designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. absolute maximum ratings(t a =25 ) symbol arameter value unit v dss drain-source voltage (v gs =0) 700 v v gs gate-source voltage 30 v i d drain current-continuous@ tc=25 3 a p tot total dissipation@tc=25 40 w t j max. operating junction temperature 150 t stg storage temperature range -55~150 pdf pdffactory pro www.fineprint.cn
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor 2SK1662 electrical characteristics (t c =25 ) symbol parameter conditions min typ max unit v (br)dss drain-source breakdown voltage v gs =0; i d = 10ma 700 v v gs( th ) gate threshold voltage v ds =10 v gs ; i d =1ma 2.5 3.5 v r ds( on ) drain-source on-stage resistance v gs =10v; i d =1.5a 5.5 i gss gate source leakage current v gs = 30v;v ds = 0 100 na i dss zero gate voltage drain current v ds =700v; v gs = 0 500 ua pdf pdffactory pro www.fineprint.cn
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